CVE-2025-47385
7.8Qualcomm · Snapdragon (FastConnect and LeMans chipsets)
A memory corruption vulnerability exists in specific Qualcomm Snapdragon chipsets due to improper access control when interacting with the trusted execution environment.
Executive summary
A high-severity memory corruption vulnerability in Qualcomm Snapdragon components allows local attackers to achieve total compromise of confidentiality, integrity, and availability.
Vulnerability
The vulnerability is categorized as CWE-1262 (Improper Access Control for Register Interface), occurring when an authenticated local user accesses the trusted execution environment without performing necessary privilege checks.
Business impact
The CVSS score of 7.8 reflects a significant risk, particularly because the vulnerability allows for total technical impact on the affected device. While the attack requires local access, successful exploitation enables an attacker to bypass security boundaries, potentially leading to full system compromise, unauthorized data access, and loss of control over the trusted execution environment.
Remediation
Immediate Action: Review the March 2026 Qualcomm Security Bulletin and apply the latest firmware or OS-level security updates provided by your device manufacturer.
Proactive Monitoring: Monitor system logs for unusual kernel-level activity or processes attempting unauthorized access to hardware registers or the trusted execution environment.
Compensating Controls: Ensure device integrity is maintained through hardware-backed security features and restrict physical or local access to sensitive hardware interfaces where possible.
Exploitation status
Public Exploit Available: Unknown.
Analyst recommendation
Given the potential for total system compromise, organizations and end-users should prioritize the deployment of vendor-provided updates as soon as they become available. Failure to patch may leave devices vulnerable to local attackers seeking to elevate privileges or bypass critical security controls within the hardware abstraction layer.